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The ELDEC Silicon On Sapphire (SOS) design incorporates silicon strain gauges
configured as a fully active 4-arm bridge molecularly bonded to a sapphire
diaphragm. Applied pressure induces strain resulting in a differential output
voltage proportional to excitation and applied pressure. This construction takes
advantage of material properties to provide a superior pressure measuring
device. In the ELDEC pressure sensor, a separate temperature sensing resistor,
isolated from pressure effects, is located directly on the sapphire pressure
measuring diaphragm. This integral temperature sensor allows ratiometric
temperature compensation for highest accuracy.
General Characteristics
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CHARACTERISTIC |
RANGE |
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Pressure bridge resistance |
4,500 ohms nominal |
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Excitation voltage |
10 volts nominal |
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Temperature Sensor |
10,000 ohms nominal |
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Size |
One inch dia. for 15 to 500 psi F.S. |
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Packaging |
To suit, contact ELDEC |
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